Self-aligned salicide process for forming semiconductor devices

Details Self-aligned salicide process for forming semiconductor devices Self-aligned salicide process for forming semiconductor devices

1989-04-12

1991-03-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 50, 437178, 437228, 437 41, 148DIG19, 148DIG116, H01L 21336, H01L 21283

Patent

active

050010824

ABSTRACT:
A self-aligned salicide process produces small dimensioned semiconductor devices, for example metal oxide semiconductor (MOS) devices. An electrode is formed on the face of a semiconductor substrate, the electrode having a top and a sidewall and an insulating coating on the sidewall. Then a silicon layer and a refractory metal layer are formed on the face, top and sidewall, with one of the layers being continuous, and the other layer having a break on the sidewall. In a preferred embodiment the silicon layer is directionally applied, to form thick portions on the face and top and thin portion on the sidewall. The thin portion on the sidewall is removed and a metal layer is uniformly deposited. The substrate is heated to convert at least part of the silicon and metal layers to silicide. The silicide layer on the face is planar and does not consume the substrate at the face, allowing shallow source and drain regions to be formed.

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