Self aligned registration marks for integrated circuit fabricati

Details Self aligned registration marks for integrated circuit fabricati Self aligned registration marks for integrated circuit fabricati

1989-07-31

1991-02-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437200, 437924, H01L 2170

Patent

active

049923943

ABSTRACT:
In order to reduce alignment errors arising in the fabrication of semiconductor integrated circuits using electron beam lithography, enhanced registration marks--(i.e., registration marks that are more easily and accurately detectable by the electron beam)--are formed at the edges of oxide layers, located at the surface of a silicon body, by means of forming metal silicide layers having edges coincident with the edges of the oxide layers. Advantageously, the enhancing of the registgration marks by forming the metal silicide is performed subsequent to any high temperature processing steps, whereby the integrity of the marks is maintained.

REFERENCES:
patent: 4233091 (1980-11-01), Kawabe
IEEE Transactions On Electron Devices, vol. Ed. 28, No. 11, Nov. 1981, "Electron-Beam Lithography for Small MOSFET's", by R. K. Watts et al., pp. 1138-1345.

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