Self-aligned recessed gate process

Details Self-aligned recessed gate process Self-aligned recessed gate process

1985-04-26

1987-04-07

Kittle, John E.

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428330, 428901, 148 15, 29576B, 29576C, 29578, 430312, 430313, 430314, 430319, 430323, 430324, 430329, B32B 310, G03C 500, H01L 2100

Patent

active

046560769

ABSTRACT:
An integrated circuit gate process and structure are disclosed which provide a self-aligned, recessed gate enhancement-mode GaAsFET. The process includes making self-aligned implants prior to gate metallization, with an intermediate step of applying patches of plasma- and chemical-etch resistant dielectric, such as zirconium oxide (ZrO), over the self-aligned implants to fixedly define gate length. The self-aligned gate process includes stair-stepping three successive implants, in respect to both depth and concentration, to provide a dopant concentration gradient inclined depthwise away from each side of the gate. The self-aligned, recessed gate GaAsFET exhibits improved source-gate resistance without degradation of gate-drain capacitance, increased gain and drain-source current, and reduced knee-voltage. Gate length is minimized to the limits of photolithography without degrading input resistance.

REFERENCES:
patent: 4011105 (1977-03-01), Paivenen et al.
patent: 4074301 (1978-02-01), Paivenen et al.
patent: 4149904 (1979-04-01), Jones
patent: 4182023 (1980-01-01), Cohen et al.
patent: 4329186 (1982-05-01), Kotecha et al.
patent: 4348804 (1982-09-01), Ogawa et al.
patent: 4363830 (1982-12-01), Hsu et al.
patent: 4497109 (1985-02-01), Huber et al.
A New Technology for Tapered Windows in Insulating Films, Journ. Electrochem Soc., USA, vol. 126, No. 3, (Mar. 1979), pp. 503-506.
GaAs Power Field-Effect Transistors for K-Band Operation, Taylor et al, RCA Review, vol. 42, Dec. 1981, pp. 508-521.

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