Self-aligned rear electrode for diode array element

Details Self-aligned rear electrode for diode array element Self-aligned rear electrode for diode array element

2005-02-08

2005-02-08

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S053000, C257S292000, C257S458000, C257S755000, C257S756000, C438S073000, C438S096000

Reexamination Certificate

active

06852566

ABSTRACT:
A PIN active pixel sensor array including self aligned encapsulated electrodes and a method for forming the same the method including forming an electrically conductive layer over a substrate; forming a first doped semiconductor layer over the conductive layer; photolithographically patterning and etching through a thickness portion of the first doped semiconductor layer and conductive layer to expose the substrate to form a plurality of spaced apart electrodes having an upper portion comprising the first doped semiconductor layer; blanket depositing a second doped semiconductor layer to cover the spaced apart electrodes including the exposed substrate; and, etching through at least a thickness portion of the second doped semiconductor layer.

REFERENCES:
patent: 6300648 (2001-10-01), Mei et al.
patent: 6501065 (2002-12-01), Uppal et al.

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