Self-aligned raised extrinsic base bipolar transistor...

Details Self-aligned raised extrinsic base bipolar transistor... Self-aligned raised extrinsic base bipolar transistor...

2005-03-22

2005-03-22

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S320000, C438S361000, C438S364000, C438S359000, C257S565000, C257S586000

Reexamination Certificate

active

06869852

ABSTRACT:
A method of fabricating a bipolar transistor structure that provides unit current gain frequency (fT) and maximum oscillation frequency (fMAX) improvements of a raised extrinsic base using non-self-aligned techniques to establish a self-aligned structure. Accordingly, the invention eliminates the complexity and cost of current self-aligned raised extrinsic base processes. The invention forms a raised extrinsic base and an emitter opening over a landing pad, i.e., etch stop layer, then replaces the landing pad with a conductor that is converted, in part, to an insulator. An emitter is then formed in the emitter opening once the insulator is removed from the emitter opening. An unconverted portion of the conductor provides a conductive base link and a remaining portion of the insulator under a spacer isolates the extrinsic base from the emitter while maintaining self-alignment of the emitter to the extrinsic base. The invention also includes the resulting bipolar transistor structure.

REFERENCES:
patent: 5117271 (1992-05-01), Comfort et al.
patent: 5128271 (1992-07-01), Bronner et al.
patent: 5266505 (1993-11-01), Ahlgren et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5494836 (1996-02-01), Imai
patent: 5506427 (1996-04-01), Imai
patent: 5599723 (1997-02-01), Sato
patent: 5824589 (1998-10-01), Miwa
patent: 5962880 (1999-10-01), Oda et al.
patent: 6080631 (2000-06-01), Kitahata
patent: 6346453 (2002-02-01), Kovacic et al.
patent: 6437376 (2002-08-01), Ozkan
patent: 6472262 (2002-10-01), Chantre et al.
patent: 6509242 (2003-01-01), Frei et al.
patent: 6531369 (2003-03-01), Ozkan et al.
patent: 6559020 (2003-05-01), Salmi
patent: 6617220 (2003-09-01), Dunn et al.
patent: 6713361 (2004-03-01), Nawaz et al.
patent: 20020132438 (2002-09-01), Dunn et al.
patent: 20020192894 (2002-12-01), Kalintsky et al.
patent: 20030057458 (2003-03-01), Freeman et al.
patent: 20030064555 (2003-04-01), Ahlgren et al.
patent: 2002313798 (2002-09-01), None
“A Selective-Epitaxial-Growth SiGe-Base HBT With SMI Electrodes Feraturing 9.3-ps ECL-Gate Delay,” K. Washio et al., IEEE Transactions on Electron Devices, vol. 46, No. 7, Jul. 1999, pp. 1411-1416.

Affiliated with

Also associated with

Rating

Self-aligned raised extrinsic base bipolar transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned raised extrinsic base bipolar transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned raised extrinsic base bipolar transistor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3381284