Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-01-07
2009-10-06
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S347000, C257SE29245, C257SE29168, C257SE49003, C977S938000
Reexamination Certificate
active
07598516
ABSTRACT:
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
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Avouris Phaedon
Carruthers Roy A.
Chen Jia
Detavernier Christophe G. M. M.
Lavoie Christian
Alexanian Vazken
International Business Machines - Corporation
Menz Douglas M
Scully , Scott, Murphy & Presser, P.C.
Such Matthew W
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