Self-aligned process for manufacturing phase change memory...

Details Self-aligned process for manufacturing phase change memory... Self-aligned process for manufacturing phase change memory...

2006-06-02

2008-09-09

Le, Thao X. (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S042000

Reexamination Certificate

active

07422926

ABSTRACT:
A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the heater element and the phase change storage region a heater structure is first formed and a phase change layer is deposited on and in contact with the heater structure. Then, the phase change layer and the heater structure are defined by subsequent self-aligned etch steps.

REFERENCES:
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6579760 (2003-06-01), Lung
patent: 2003/0186481 (2003-10-01), Lung
patent: 2004/0211953 (2004-10-01), Khouri et al.
patent: 2006/0091492 (2006-05-01), Lee et al.
patent: 2007/0045606 (2007-03-01), Magistretti et al.
patent: 0 144 604 (1985-06-01), None
patent: 1 469 532 (2004-10-01), None
patent: 2005-71500 (2005-03-01), None
patent: WO 2004/021358 (2004-03-01), None
patent: WO 2005/017906 (2005-02-01), None

Affiliated with

Also associated with

Rating

Self-aligned process for manufacturing phase change memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned process for manufacturing phase change memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned process for manufacturing phase change memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3975038