Self-aligned process for manufacturing phase change memory...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S042000

Reexamination Certificate

active

11445924

ABSTRACT:
A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the heater element and the phase change storage region a heater structure is first formed and a phase change layer is deposited on and in contact with the heater structure. Then, the phase change layer and the heater structure are defined by subsequent self-aligned etch steps.

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