Self-aligned process for gated field emitters

Details Self-aligned process for gated field emitters Self-aligned process for gated field emitters

1993-07-22

1995-01-03

Bradley, P. Austin

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, 427 77, H01J 130, H01J 902

Patent

active

053781821

ABSTRACT:
A method of forming a self-aligned gated field emitter with substantial manufacturing advantages is described. There is provided a substrate having at its surface a conductive layer. A first dielectric layer is deposited over the substrate. A conducting layer is deposited over the dielectric layer. Lithography and etching are used to form an opening through the conducting layer and the dielectric layer down to the surface of the substrate wherein there is formed an overhang of the conducting layer over the etched dielectric layer in the opening. Material is vertically deposited through the opening and over the conducting layer until the field emitter is formed and the opening is closed by build up of the depositing material over the conducting layer. At least a portion of the build up of the depositing material over the conducting layer is oxidized down to the desired opening size to form an oxide layer of the material. The oxide layer is removed by etching to expose the desired opening, thereby completing formation of the self-aligned gated field emitter.

REFERENCES:
patent: 3789471 (1974-02-01), Spindt et al.
patent: 4763187 (1988-08-01), Biberian
patent: 4857161 (1989-08-01), Borel et al.
patent: 4857799 (1989-08-01), Spindt et al.
patent: 5151061 (1992-09-01), Sandhu
patent: 5188977 (1993-02-01), Stengl et al.
patent: 5209687 (1993-05-01), Konishi

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