Self-aligned process for fabrication of interconnect structures

Details Self-aligned process for fabrication of interconnect structures Self-aligned process for fabrication of interconnect structures

1989-11-28

1992-05-12

Niebling, John

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Coating selected area

156643, 156652, 156659, 437192, 437228, 205182, 205223, 205224, 205917, C25D 502, H01L 21288

Patent

active

051124483

ABSTRACT:
A method for fabricating conductors in dielectric trenches in a self-aligned manner. Interconnect modules with a high conductor density are achieved by using a copper-polyimide system as a versatile packaging approach. A photosensitive polyimide is applied to a substrate and lithographically patterned to form polyimide steps having a characteristic positive slope, between which are defined trenches in which the substrate is exposed. A thin electroplating seed layer is deposited over the polyimide steps and the substrate. Copper is electroplated into trenches, but does not plate onto the tops of the polyimide steps, since the electroplating seed layer at that location is not electrically connected to the electroplating seed layer in the bottom of the trenches. The electroplating seed layer on top of the polyimide steps is then removed by chemical etching, plasma machining, or ion-milling. A planar structure is eventually obtained without the use of multiple coatings of polyimide layers or any additional masking layers or lift-off layers.

REFERENCES:
patent: 4339305 (1982-07-01), Jones
patent: 4440804 (1984-04-01), Milgram
patent: 4451971 (1984-06-01), Milgram
patent: 4508815 (1985-04-01), Ackmann et al.
patent: 4519872 (1985-05-01), Anderson, Jr. et al.
patent: 4526810 (1985-07-01), Nesbitt
patent: 4532002 (1985-07-01), White
patent: 4575402 (1986-03-01), Marcoux et al.
patent: 4661204 (1987-04-01), Mathur et al.
patent: 4661214 (1987-04-01), Young
patent: 4810332 (1989-03-01), Pan

Affiliated with

Also associated with

Rating

Self-aligned process for fabrication of interconnect structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned process for fabrication of interconnect structures , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned process for fabrication of interconnect structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2425294