Self-aligned process for fabricating gallium arsenide metal-semi

Details Self-aligned process for fabricating gallium arsenide metal-semi Self-aligned process for fabricating gallium arsenide metal-semi

1981-04-17

1983-06-28

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 148187, 148188, H01L 21225

Patent

active

043897681

ABSTRACT:
A method for the fabrication of a gallium arsenide (GaAs) metal-semiconductor field effect transistor (MESFET) is described. The method requires the step of providing a semi-insulating GaAs substrate having thereon a layer of n doped GaAs and another layer of n+ doped Ga.sub.1-x Al.sub.x As, the latter being used as a diffusion source for n dopants in selectively doping the n GaAs layer underneath. The fabrication method further includes the step of employing highly directional reactive ion etching on silicon nitride to build insulating side walls thereby to effect the self-alignment of the gate of the MESFET with respect to its source and drain. GaAs MESFET fabricated using this method has its source and drain in close proximity having its gate therebetween. Utilizing the disclosed method, conventional photolithographic techniques can be employed to produce submicron self-aligned GaAs MESFETs.

REFERENCES:
patent: 3479234 (1969-11-01), Gray
patent: 3574010 (1971-04-01), Brown
patent: 3713912 (1973-01-01), Schwartz
patent: 3855690 (1974-12-01), Kim et al.
patent: 3943622 (1976-03-01), Kim et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4222164 (1980-09-01), Triebwasser
patent: 4287661 (1981-09-01), Stoffel

Affiliated with

Also associated with

Rating

Self-aligned process for fabricating gallium arsenide metal-semi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned process for fabricating gallium arsenide metal-semi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned process for fabricating gallium arsenide metal-semi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-926915