Self-aligned polysilicon emitter and contact structure for high

Details Self-aligned polysilicon emitter and contact structure for high Self-aligned polysilicon emitter and contact structure for high

1987-10-29

1989-10-03

Walton, Donald L.

Fishing, trapping, and vermin destroying

H01L 21265

Patent

active

048716847

ABSTRACT:
A semiconductor process for fabricating bipolar devices of one type and extendible to include bipolar devices of a second type in the same epi-layer. The process protects selected surfaces of the epi-layer against deleterious processes associated with the formation of future emitter/contact regions for the devices. Subsequently, such emitter/contact regions are formed beneath such protected surfaces and contribute to enhanced device performance. The process also provides improved planarization of an insulating layer on the epi-layer by chemical-mechanical polishing. The planarization in conjunction with a mask formed in the insulating layer facilitates the formation of self-aligned emitter/base regions to appropriate thicknesses for high performance devices.

REFERENCES:
patent: 3997367 (1976-12-01), Yau
patent: 4431460 (1987-02-01), Barson et al.
patent: 4483726 (1974-11-01), Isaac et al.
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4619036 (1986-10-01), Havemann et al.
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4713355 (1987-12-01), Gardner
patent: 4717686 (1988-01-01), Jacobs et al.
IBM Technical Disclosure Bulletin, vol. 27, No. 8, Jan. 1985, pp. 4899-4902, Chu et al.
IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3424-3426, Barson et al.
IBM Technical Disclosure Bulletin, vol. 24, No. 10, Mar. 1982, pp. 5128-5131, Magdo et al.
IEDM85 Conference Proceeding, pp. 688-691.
Solid State Technology/Sep. 1982, Internation Report at p. 24, Selma Uslaner, Managing Editor.

Affiliated with

Also associated with

Rating

Self-aligned polysilicon emitter and contact structure for high does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned polysilicon emitter and contact structure for high , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned polysilicon emitter and contact structure for high will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-664023