Self-aligned, planar heterojunction bipolar transistor and metho

Details Self-aligned, planar heterojunction bipolar transistor and metho Self-aligned, planar heterojunction bipolar transistor and metho

1988-11-02

1992-03-24

Nelson, Peter A.

Fishing, trapping, and vermin destroying

357 16, 357 34, H01L 21265, H01L 2972, H01L 29205

Patent

active

050988530

ABSTRACT:
A heterojunction bipolar transistor (HBT) is formed with self-aligned base-emitter and base-collector junctions by forming a two-level mask over a doped base layer, sequentially forming openings in registration through the two mask layers, and using the opening in one mask layer to define the collector region and the opening in the other mask layer to define the emitter. A buried conductive layer formed by a dopant implant establishes an electrical contact to the collector region, and connects to the surface via another conductive implant that extends through a lateral extension of the collector region. The collector region itself is formed by a dopant implant, while the active base region which forms junctions with the emitter and collector is thinner than the remainder of the base layer; the latter feature reduces the resistivity associated with connection to lateral base contacts. Parasitic capacitances are minimized when the collector and buried conductive layers are implanted into a semi-insulating substrate such that only the active junction regions overlap.

REFERENCES:
Chang et al., "AlGaAs/GaAs Heterojunction Bipolar Transistors, Fabricated Using a Self-Aligned Dual-Life-Off Process", IEEE Electron Device Lett., vol. EDL-8, No. 7, Jul. 1987, pp. 303-305.
Nakajima et al., "High Speed AlGaAs/GaAs HBTs with Proton Implanted Buried Layers", IEDM Tech. Dig., Dec. 1986, pp. 266-269.
Tully, et al., "A Fully Planar Heterojunction Bipolar Transistor", IEEE Electron Device Letts., vol. EDL-7, No. 11, Nov. 1986, pp. 615-617.
S. Evans et al., "GaAs HBT LSI/VLSI Fabrication Technology", 1987 GaAs IC Symposium Tech. Digest, 1987, pp. 109-112.

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