Self-aligned photodiode for CMOS image sensor and method of...

Details Self-aligned photodiode for CMOS image sensor and method of... Self-aligned photodiode for CMOS image sensor and method of...

2005-09-27

2008-03-18

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S078000, C257SE21362

Reexamination Certificate

active

07344910

ABSTRACT:
A method for forming a photodiode that is self-aligned to a transfer gate while being compatible with a metal silicide process is disclosed. The method comprises forming a gate stack of gate oxide, polysilicon, and a sacrificial/disposable cap insulator over the polysilicon. The insulator may be a combination of silicon oxynitride and silicon dioxide. After formation of the photodiode, the cap insulator layer is removed.

REFERENCES:
patent: 6040593 (2000-03-01), Park
patent: 6894268 (2005-05-01), Ohkawa
patent: 7183129 (2007-02-01), Lee
patent: 2003/0234432 (2003-12-01), Song et al.

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