Self-aligned narrow gate MESFET process

Details Self-aligned narrow gate MESFET process Self-aligned narrow gate MESFET process

1978-04-27

1981-03-03

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29578, 29580, 357 15, 357 59, 427 84, 427 91, B01J 1700

Patent

active

042532299

ABSTRACT:
A method of making a narrow gate MESFET including the steps of placing a layered mask of nitride and polysilicon over a channel region for self-aligning in a substrate, oxidizing and then removing the polysilicon to reduce the remaining polysilicon width, etching the nitride to the polysilicon width, oxidizing the substrate where the nitride defines the gate therein, removing the nitride, and depositing metal on the gate to form the MESFET Schottky gate. Advantages of the improved MESFET include a relatively higher device gain, greater IC density, a self-aligned Schottky gate, controllable minimum series resistance, a relatively short channel using a conventional photo process, and a n- resistor that may be easily simultaneously fabricated therewith.

REFERENCES:
patent: 3604107 (1971-09-01), Fassett
patent: 4048712 (1977-09-01), Buiatti
patent: 4102733 (1978-07-01), De La Moneda
patent: 4124933 (1978-11-01), Nicholas

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