Self-aligned nanotube field effect transistor

Details Self-aligned nanotube field effect transistor Self-aligned nanotube field effect transistor

2011-03-01

2011-03-01

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S024000, C257S346000, C257SE51040, C977S938000, C977S940000

Reexamination Certificate

active

07897960

ABSTRACT:
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

REFERENCES:
patent: 6025235 (2000-02-01), Krivokapic
patent: 6420751 (2002-07-01), Maeda et al.
patent: 7635856 (2009-12-01), Appenzeller et al.
patent: 2002/0001905 (2002-01-01), Choi et al.
patent: 1 124 262 (2001-08-01), None
patent: 2002110977 (2002-04-01), None
patent: WO 02/11216 (2002-02-01), None
Xuejue Huang et al., “SUB 50-nm FinFET:PMOS,” pp. 67-70, 1999, IEDM Technical Digest International; Washington DC, USA Dec. 5-8, 1999, Piscataway, NJ.
Richard Martel, et al., “Carbon Nanotude Field Effect Transistors For Logic Applications,” pp. 159-162, IEDM, Technical Digest, Washington, DC, Dec. 2-5, 2001-New York, NY: IEEE, US, Dec. 2, 2001, pp.
J.W. Park, et al., “Effects of Artificial Defects on the Electrical Transport of Single-Walled Carbon Nanotubes,” pp. 133-135, Applied Physics Letters, vol. 89, No. 1, Jan. 7, 2002.
Richard Martel, et al., “Carbon Nanotube Field Effect Transistors For Logic Applications,” pp. 7.5.1-7.5.4, 2001, IEEE.
J.W. Park, et al., “Effects of Artificial Defects on the Electrical Transport of Single-Walled Carbon Nanotubes,” pp. 133-135, vol. 80, No. 1, Jan. 7, 2002.
English Abstract for Publication No. JP2002110977.
English Abstract for Publication No. WO 2002/011216, 2002.
Canadian office action, 2009.

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