Self-aligned micrometer bipolar transistor device and process

Details Self-aligned micrometer bipolar transistor device and process Self-aligned micrometer bipolar transistor device and process

1979-11-29

1981-12-01

Larkins, William D.

357 34, 357 54, 357 56, 357 59, H01L 2704, H01L 2972

Patent

active

043039332

ABSTRACT:
A method for device fabrication disclosed is a self-aligned process. The device formed has small vertical as well as horizontal dimensions. The device region is surrounded by a deep oxide trench which has nearly vertical sidewalls. The deep trench extends from the epitaxial silicon surface through N+ subcollector region into the P substrate. The width of the deep trench is about 2 .mu.m to 3.0 .mu.m. A shallow oxide trench extending from the epitaxial silicon surface to the upper portion of the N+ subcollector separates the base and collector contact. The surface of the isolation regions and the silicon where the transistor is formed is coplanar. As shown in FIG. 1, the fabricated bipolar transistor has a mesa-type structure. The transistor base dimension is only slightly larger than the emitter. This small base area results in low collector-base capacitance which is a very important parameter in ultra-high performance integrated circuit devices. Contact to the transistor base in the disclosed structure is achieved by a thick heavily boron doped polysilicon layer which surrounds the emitter and makes lateral contact to the active base.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3631307 (1971-12-01), Naugler
patent: 3648125 (1972-03-01), Peltzer
patent: 3796613 (1974-03-01), Magdo et al.
patent: 3873372 (1975-03-01), Johnson
patent: 3904450 (1975-09-01), Evans
patent: 3919005 (1975-11-01), Schinella
patent: 3947299 (1976-03-01), Weijland
patent: 3958323 (1976-05-01), De Lamoneda
patent: 3961999 (1976-06-01), Antipov
patent: 4011105 (1977-03-01), Paivinen
patent: 4048649 (1977-09-01), Bohn
patent: 4103415 (1978-08-01), Hayes
patent: 4104086 (1978-08-01), Bondur
patent: 4139442 (1979-02-01), Bondur
patent: 4195307 (1980-03-01), Jambotkar
J. Echem. Soc., Jan. 1967, pp. 603-605.

Affiliated with

Also associated with

Rating

Self-aligned micrometer bipolar transistor device and process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned micrometer bipolar transistor device and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned micrometer bipolar transistor device and process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1299509