Self-aligned methods based on low-temperature selective...

Details Self-aligned methods based on low-temperature selective... Self-aligned methods based on low-temperature selective...

2011-07-12

2011-07-12

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C257SE21054

Reexamination Certificate

active

07977154

ABSTRACT:
Self-aligned fabrication of silicon carbide semiconductor devices is a desirable technique enabling reduction in the number of photolithographic steps, simplified alignment of different device regions, and reduced spacing between the device regions. This invention provides a method of fabricating silicon carbide (SiC) devices utilizing low temperature selective epitaxial growth which allows avoiding degradation of many masking materials attractive for selective epitaxial growth. Another aspect of this invention is a combination of the low temperature selective epitaxial growth of SiC and self-aligned processes.

REFERENCES:
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patent: 2003/0034495 (2003-02-01), Casady et al.
patent: 2005/0263795 (2005-12-01), Choi et al.
patent: 2006/0211210 (2006-09-01), Bhat et al.
patent: 2007/0145378 (2007-06-01), Agarwal et al.

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