Self-aligned method of making phase-shifting lithograhic masks h

Details Self-aligned method of making phase-shifting lithograhic masks h Self-aligned method of making phase-shifting lithograhic masks h

1992-06-29

1994-05-03

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430323, 430324, 430313, 430316, G03F 900, G03C 500

Patent

active

053087216

ABSTRACT:
A phase-shifting lithographic mask having two or more self-aligned phase-shifting regions is fabricated by a sequence of etchings of the phase-shifting mask using a protective resist layer having three or more regions that have been subjected to mutually different doses (including possibly zero) of actinic radiation-such as electron beam, ion beam, or photon beam radiation. A self-aligned opaque region can be supplied by carbonization of remaining resist material.

REFERENCES:
patent: 5153083 (1992-10-01), Garofalo et al.
Ohtsuka, H. et al., "Conjugate Twin-Shifter for the New Phase Shift Method to High Resolution Lithography," SPIE (Society of Photo-Optical Instrumentation Engineers), the Int. Soc. Optical Engineers, Proc. of Optical/Laser Microlithography IV, pp. 112-123 (Mar. 6-8, 1991).
Watanabe, H. et al., "Transparent Phase Shifting Mask with Multistage Phase Shifter and Comb-shaped Shifter," same as above, pp. 101-110.

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