Self aligned method for making bipolar transistor having minimum

Details Self aligned method for making bipolar transistor having minimum Self aligned method for making bipolar transistor having minimum

1980-01-25

1981-02-24

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29576W, 29578, 29591, 148174, 148187, 148188, 156644, 156653, 156657, 357 20, 357 50, 357 88, 357 89, H01L 21203, H01L 2122, H01L 2131

Patent

active

042525829

ABSTRACT:
A method for making a high performance bipolar transistor characterized by self-aligned emitter and base regions and minimized base and emitter contact spacing. The disclosed method comprises forming a recessed oxide-isolated structure having opposite conductivity epitaxial layer and substrate. Multiple layered mass of alternating silicon nitride and silicon dioxide layers are placed over the base region and over the collector reach-through region. Polycrystalline silicon is deposited between the mesas. The mesas are undercut-etched to expose the extrinsic base region which is ion implanted. Then, the mesas are removed to expose the emitter and intrinsic base regions as well as the collector reach-through regions. The latter exposed regions are ion implanted appropriately. Contacts are made directly to the emitter and collector reach-through regions and indirectly via the polysilicon to the base region.

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Hsu et al., "Low-Noise Microwave Bipolar Transistor . . . Emitter Width," IEEE Trans. on Electron Dev., vol. ED-25, No. 6, Jun. 1978, pp. 723-730.

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