Self-aligned method for forming polysilicon word lines on top of

Details Self-aligned method for forming polysilicon word lines on top of Self-aligned method for forming polysilicon word lines on top of

1993-12-01

1995-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054299764

ABSTRACT:
A method is described for forming a dynamic random access memory cell capacitor in which polysilicon word lines are formed in a self-aligned method on top of the gate electrodes of the memory cell wherein the polysilicon word lines act to increase the surface area and hence to increase the capacitance of the capacitor.

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patent: 5142300 (1992-09-01), Hamamoto et al.
patent: 5155056 (1992-10-01), Jeong-Gyoo
patent: 5330614 (1994-07-01), Ahn

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