Fishing – trapping – and vermin destroying
Patent
1993-12-17
1995-08-08
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437241, 437235, H01L 2144
Patent
active
054398460
ABSTRACT:
A method for self-aligned zero-margin contacts to active and poly-1, using silicon nitride or other dielectric material with low reflectivity and etch selectivity to oxide for an etch stop layer and also for sidewall spacers on the gate.
REFERENCES:
patent: 4354896 (1982-10-01), Hunter et al.
patent: 4656732 (1987-04-01), Teng et al.
patent: 4792534 (1988-12-01), Tsuji et al.
patent: 4801350 (1989-01-01), Mattox et al.
patent: 4912061 (1990-03-01), Nasr
patent: 4962414 (1990-10-01), Liou et al.
patent: 5117273 (1992-05-01), Stark et al.
patent: 5158910 (1992-11-01), Cooper et al.
IBM Technical Disclosure Bulletin, vol. 30, No. 8, Jan. 1988, "Methods of Forming Small Contact Holes".
IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, "Method to Produce Sizes In Openings In Photo Images Smaller Than Lithographic Minimum Size".
IEDM 1987 (Dec. 1987), pp. 358-361, Lau et al. "A Super Self-Aligned Source/Drain MOSFET".
IEDM 1992 (Apr. 1992) pp. 837-840, Fukase et al., "A Margin-Free Contact Process Using Al.sub.2 O.sub.3 Etch-Stop Layer For High Density Devices".
Semiconductor Int'l, Aug. 1993, p. 36, Pete Singer, "A New Technology for Oxide Contact and Via Etch" Pete Singer, Editor.
Hodges Robert L.
Nguyen Loi
Chaudhuri Olik
Everhart C.
Groover Robert
Jorgenson Lisa K.
Robinson Richard K.
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