Coating processes – Electrical product produced – Condenser or capacitor
Patent
1984-07-27
1986-09-02
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
427 88, 427 93, 427 94, H01L 2120
Patent
active
046095683
ABSTRACT:
A process for fabricating self-aligned regions of metal silicide on bipolar integrated circuits having self-aligned polycrystalline silicon emitters and base contacts includes the steps of depositing a layer of polycrystalline silicon across the surface of the structure, patterning the polycrystalline silicon to define the emitters and base contacts as well as resistors and diodes, heating the structure to transfer desired conductivity dopants from the polycrystalline silicon into the underlying structure, forming a protective layer over those regions of the structure where metal silicide is not desired, depositing a layer of refractory metal across the entire structure, and reacting the refractory metal with the underlying silicon to form metal silicide.
REFERENCES:
patent: 4080719 (1978-03-01), Wilting
patent: 4124934 (1978-11-01), De Brebisson
patent: 4249968 (1981-02-01), Gardiner et al.
"Self-Aligned Titanium Silicidation of Submicron Most Devices by Rapid Lamp Annealing," K. Tsukamoto et al., CH2099-0/84/0000-0130 I.E.D.M., 1984, pp. 130-133.
"Development of the Self-Aligned Titanium Silicide Process for VLSI Applications," M. E. Alperin, et al., 0018-9383/85/0200-0141 I.E.E.E., 1985, pp. 141-149.
"An Advanced PSY Process for High Speed Bipolar VLSI," I. Ishada, et al., CH1504-0'79 0000-0336, I.E.E.E., 1979, pp. 336-339.
"A High Performance CMOS Technology With Ti-Silicided P/N-Type Poly-Si Gates," Y. Murao, et al., CH1973-7/83/0000-0518 I.E.E.E., 1983, pp. 518-521.
"Titanium Disilicide Self-Aligned Source/Drain+Gate Technology," C. K. Lau, et al., CH1832-5/82/0000-0714, IEEE, 1982, pp. 714-717.
Chien Frank
Koh Yun Bai
Vora Madhu
Carroll David H.
Colwell Robert C.
Fairchild Camera & Instrument Corporation
Jaconetty K.
Silverman Carl L.
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