Self aligned memory element and wordline

Details Self aligned memory element and wordline Self aligned memory element and wordline

2007-05-22

2007-05-22

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S082000

Reexamination Certificate

active

10314591

ABSTRACT:
An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrode layer of the memory cells to the second conductive layer. Optionally, a conductivity facilitating layer is formed over the conductive layer. Dielectric material separates the memory cells. The memory cells are self-aligned with the bitlines formed in the first conductive layer and the wordlines formed in the second conductive layer.

REFERENCES:
patent: 4052209 (1977-10-01), Huffman et al.
patent: 4860254 (1989-08-01), Pott et al.
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 5792694 (1998-08-01), Park
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6060333 (2000-05-01), Tanaka et al.
patent: 6077716 (2000-06-01), Yoo
patent: 6136643 (2000-10-01), Jeng et al.
patent: 6458474 (2002-10-01), Okada et al.
patent: 6815781 (2004-11-01), Vyvoda et al.
patent: 2003/0179617 (2003-09-01), Gudesen et al.
patent: 2004/0102039 (2004-05-01), Lim et al.
patent: 2004/0217347 (2004-11-01), Tripsas et al.
patent: 2005/0054138 (2005-03-01), Hsu et al.
patent: WO 02/37500 (2002-05-01), None
International Search Report, PCT/US03/28023, mailed Jul. 14, 2004.

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