Self-aligned masking for ultra-high energy implants with applica

Details Self-aligned masking for ultra-high energy implants with applica Self-aligned masking for ultra-high energy implants with applica

1990-05-31

1991-08-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 61, 437 67, 437940, H01L 21265

Patent

active

050432923

ABSTRACT:
A self-aligned masking process for use with ultra-high energy implants (implant energies equal to or greater than 1 MeV) is provided. The process can be applied to an arbitrary range of implant energies. Consequently, high doses of dopant may be implanted to give high concentrations that are deeply buried. This can be coupled with the fact that amorphization of the substrate lattice is relatively localized to the region where the ultra-high energy implant has peaked to yield a procedure to form buried, localized isolation structures.

REFERENCES:
patent: 4386968 (1978-06-01), Hinkel et al.
patent: 4597163 (1986-07-01), Tsang
patent: 4655875 (1987-04-01), Wada et al.
patent: 4697333 (1987-10-01), Nakahara
patent: 4810667 (1989-03-01), Zorinsky et al.
patent: 4992390 (1991-02-01), Chang

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