Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-05-02
2006-05-02
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603140, C029S603150, C029S603160, C029S603180, C216S039000, C216S041000, C360S318000, C360S321000, C360S324000, C360S325000, C360S326000, C360S327000, C365S158000, C365S173000, C427S127000, C427S128000
Reexamination Certificate
active
07036208
ABSTRACT:
A magnetoresistive sensor for use in a data storage device has a recessed sensing element (magnetic tunnel junction, CPP spin valve, etc.) with an exchange biased sensing ferromagnetic (free) layer, and a flux guide that magnetically connects the sensing element to a sensing surface of the sensor. The free layer is selectively exchange biased by a layer of exchange bias material placed under non-active regions of the free layer that lie outside the sensing element and flux guide track widths. The flux guide is provided by extending the free layer from a forward edge of the sensing element to the sensor surface. Advantageously, the sensing element and the flux guide have equal track width so that magnetic flux directed from the flux guide into the sensing element is not diluted with consequent loss of sensitivity.
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“Evaluation of front flux guide-type magnetic tunnel junction”; Shimazawa, K.; Redon, O.; Kasahara, N.; Sun, J.J.; Sato, K.; Kagami, T.; Saruki, S.; Umehara, T.; Fujita, Y.; Yarimizu, S.; Araki, S.; Morita, H.; Matsuzaki, M.; Magnetics, IEEE Tranactions on vol. 36, Issue 5, Sep. 2000 Page(s):2542-2544.
Ho Kuok San
Pan Tao
Duft Walter W.
Hitachi Global StorageTechnologies Netherlands B.V
Kim Paul D.
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