Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-07-12
2005-07-12
Quach, T. N. (Department: 2826)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S381000, C438S622000
Reexamination Certificate
active
06916669
ABSTRACT:
A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (264), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.
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Barron Carole C.
Jones Robert E.
Luckowski Eric D.
Melnick Bradley M.
Freescale Semiconductor Inc.
Quach T. N.
Vo Kim-Marie
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