Self-aligned low-temperature emitter drive-in

Details Self-aligned low-temperature emitter drive-in Self-aligned low-temperature emitter drive-in

1984-09-28

1986-10-28

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576T, 148 15, 148187, 148DIG10, 357 34, 357 91, 427 531, H01L 21265, H01L 21322

Patent

active

046190368

ABSTRACT:
After the extrinsic base region of a bipolar transistor has been formed, and the emitter contact has been patterned and cut, the emitter dopant is deposited or spun on, and the emitter dopant is then driven in using a short pulse of radiant energy. The necessity for high-temperature annealing of the emitter doping is thereby avoided, and the base doping profile is not disturbed by high-temperature annealing steps.

REFERENCES:
patent: 4338139 (1982-07-01), Shinada
patent: 4377031 (1983-03-01), Goto et al.
patent: 4377421 (1983-03-01), Wada et al.
patent: 4377902 (1983-03-01), Shinada et al.
Joshi et al., IBM--TDB, 13, (1970), 928.
Anantha et al., IBM--TDB, 22, (1979), 575.
Hendel et al., Jour. Vac. Sci. Technol., 18, (1981), 818.
Tsunoda, Jap. Jour. Appl. Phys., 21, (1982), L-106.

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