Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-07-10
2000-04-18
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257230, H01L 27148, H01L 29768
Patent
active
060518529
ABSTRACT:
A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by photolithography. The self aligned, lateral-overflow drain (LOD) antiblooming structure results in a design that saves space, and hence, improves overall sensor performance. In this structure, an antiblooming potential barrier is provided that is smaller (in volts) than the barriers that separate the pixels from one another so that excess charge will flow preferentially into the LOD as opposed to the adjacent pixels.
REFERENCES:
patent: 4028716 (1977-06-01), Van Santen et al.
patent: 4173064 (1979-11-01), Farnow
patent: 4362575 (1982-12-01), Wallace
patent: 4504848 (1985-03-01), Matsumoto et al.
patent: 4593303 (1986-06-01), Dyck et al.
patent: 4603342 (1986-07-01), Savoye et al.
patent: 5130774 (1992-07-01), Stevens et al.
patent: 5349215 (1994-09-01), Anagnostopoulos et al.
patent: 5585298 (1996-12-01), Stevens et al.
Eastman Kodak Company
Leimbach James D.
Munson Gene M.
LandOfFree
Self aligned LOD antiblooming structure for solid-state imagers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self aligned LOD antiblooming structure for solid-state imagers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self aligned LOD antiblooming structure for solid-state imagers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2337992