Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-07-03
2007-07-03
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S061000, C257S066000, C257S067000, C257S069000, C257S070000, C257S291000
Reexamination Certificate
active
10833487
ABSTRACT:
A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material that provides a permeable barrier to a dopant. The semiconductor layer including the first region covered by the first masking layer is exposed to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking region.
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Office Action in counterpart Taiwan patent application No. TW 200302372.
Chang Shih Chang
Deng De-Hua
Fang Chun-Hsiang
Tsai Yaw-Ming
Tseng Chang-Ho
Liu & Liu
Soward Ida M.
TPO Displays Corp.
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