Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Reexamination Certificate
2007-07-03
2007-07-03
Ha, Nathan W. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Reexamination Certificate
active
11123748
ABSTRACT:
A lateral heterojunction bipolar transistor (HBT) comprising a semiconductor substrate having having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.
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patent: 2003/0011001 (2003-01-01), Chevalier et al.
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Chan Lap
Chu Shao-fu Sanford
Li Jian Xun
Verma Purakh Raj
Zheng Jia Zhen
Chartered Semiconductor Manufacturing Ltd.
Ishimaru Mikio
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