Self-aligned lateral heterojunction bipolar transistor

Details Self-aligned lateral heterojunction bipolar transistor Self-aligned lateral heterojunction bipolar transistor

2005-06-21

2005-06-21

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S316000, C438S312000, C438S313000

Reexamination Certificate

active

06908824

ABSTRACT:
A method for manufacturing a lateral heterojunction bipolar transistor (HBT) is provided comprising a semiconductor substrate having a first insulating layer over the semiconductor substrate. A base trench is formed in a first silicon layer over the first insulating layer to form a collector layer over an exposed portion of the semiconductor substrate and an emitter layer over the first insulating layer. A semiconductive layer is formed on the sidewalls of the base trench to form a collector structure in contact with the collector layer and an emitter structure in contact with the emitter layer. A base structure is formed in the base trench. A plurality of connections is formed through an interlevel dielectric layer to the collector layer, the emitter layer, and the base structure. The base structure preferably is a compound semiconductive material of silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.

REFERENCES:
patent: 2003/0011001 (2003-01-01), Chevalier et al.
patent: 2003/0025125 (2003-02-01), Menut et al.

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