Self-aligned junction passivation for superconductor...

Semiconductor device manufacturing: process – Having superconductive component

Reexamination Certificate

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C438S722000, C438S768000, C505S329000

Reexamination Certificate

active

07060508

ABSTRACT:
A superconductor integrated circuit (1) includes an anodization ring (35) disposed around a perimeter of a tunnel junction region (27) for preventing a short-circuit between an outside contact (41) and the base electrode layer (18). The tunnel junction region (27) includes a junction contact (31) with a diameter of approximately 1.00 μm or less defined by a top surface of the counter electrode layer (24). The base electrode layer (18) includes an electrode isolation region (36) disposed approximately 0.8 μm in horizontal distance from the junction contact (31) for providing device isolation.

REFERENCES:
patent: 4421785 (1983-12-01), Kroger
patent: 4499119 (1985-02-01), Smith
patent: 4768069 (1988-08-01), Talvacchio et al.
patent: 4889587 (1989-12-01), Komuro
patent: 5286336 (1994-02-01), Chan et al.
patent: 5962865 (1999-10-01), Kerber et al.
patent: 6188084 (2001-02-01), Kerber et al.
patent: 6642608 (2003-11-01), Hu
patent: 2003/0068832 (2003-04-01), Koval et al.
patent: 0 476 844 (1992-03-01), None
patent: 2-82661 (1990-03-01), None
H. Kroger et al., “Selective Niobium Anodization Process for Fabricating Josephson Tunnel Junctions,”Appl. Phys. Lett.39(3), Aug. 1, 1981, pp. 280-282.
S. Morohashi et al., “Self-aligned Contact Process for Nb/AlOx/Nb Josephson Junctions,”Appl. Phys. Lett.48(3), Jan. 20, 1986, pp. 254-256.
Y. Tarutani et al., “Niobium-Based Integrated Circuit Technologies,”Proceedings of the IEEE, vol. 77, No. 8, Aug. 1989, pp. 1164-1175.
L. Lee et al., “RHEA Process for Fine-Geometry Josephson Junction Fabrication,”IEEE Transactions on Magnetics, vol. 27, No. 2, Mar. 1991, pp. 3133-3136.
T. Imamura et al., “A Submicrometer Nb/AlOx/Nb Josephson Junction,”J. Appl. Phys.Lett. 64(3), Aug. 1, 1988, pp. 1586-1588.
S. Hasuo, “High-Speed Josephson Integrated Circuit Technology,”IEEE Trans. Magn., v. 25, No. 2, Mar. 1989, pp. 740-749.
X. Meng et al., “Very Small Critical Current Spreads in Nb/Al-AlOx/Nb Integrated Circuits Using Low-Temperature and Low Stress ECR PECVD Silicon Oxide Films,”IEEE Trans. Appl. Supercon., v. 9, No. 2, Jun. 1999, pp. 3208-3211.
A. Bhat et al., “A 10 GHz Digital Amplifier in an Ultra-Small-Spread High-Jc Nb/AlOx/Nb Integrated Circuit Process,”IEEE Trans. Appl. Supercon., v. 9, No. 2, Jun. 1999, pp. 3232-3236.

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