Semiconductor device manufacturing: process – Having superconductive component
Reexamination Certificate
2006-06-13
2006-06-13
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Having superconductive component
C438S722000, C438S768000, C505S329000
Reexamination Certificate
active
07060508
ABSTRACT:
A superconductor integrated circuit (1) includes an anodization ring (35) disposed around a perimeter of a tunnel junction region (27) for preventing a short-circuit between an outside contact (41) and the base electrode layer (18). The tunnel junction region (27) includes a junction contact (31) with a diameter of approximately 1.00 μm or less defined by a top surface of the counter electrode layer (24). The base electrode layer (18) includes an electrode isolation region (36) disposed approximately 0.8 μm in horizontal distance from the junction contact (31) for providing device isolation.
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Northrop Grumman Corporation
Posz Law Group , PLC
Richards N. Drew
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