Self-aligned junction passivation for superconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

Reexamination Certificate

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C257S030000, C257S032000, C257SE39014

Reexamination Certificate

active

07105853

ABSTRACT:
A superconductor integrated circuit (1) includes an anodization ring (35) disposed around a perimeter of a tunnel junction region (27) for preventing a short-circuit between an outside contact (41) and the base electrode layer (18). The tunnel junction region (27) includes a junction contact (31) with a diameter of approximately 1.00 μm or less defined by a top surface of the counter electrode layer (24). The base electrode layer (18) includes an electrode isolation region (36) disposed approximately 0.8 μm in horizontal distance from the junction contact (31) for providing device isolation.

REFERENCES:
patent: 6188084 (2001-02-01), Kerber et al.
Merriam-Webster's Collegiate Dictionary, Tenth Edition; copyright 1999; p. 319.
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A. Bhat et al., “A 10 GHz Digital Amplifier in an Ultra-Small-Spread High-Jc Nb/AlOx/Nb Integrated Circuit Process,”IEEE Trans. Appl. Supercon., v. 9, No. 2, Jun. 1999, pp. 3232-3236.

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