Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-09-12
2006-09-12
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S030000, C257S032000, C257SE39014
Reexamination Certificate
active
07105853
ABSTRACT:
A superconductor integrated circuit (1) includes an anodization ring (35) disposed around a perimeter of a tunnel junction region (27) for preventing a short-circuit between an outside contact (41) and the base electrode layer (18). The tunnel junction region (27) includes a junction contact (31) with a diameter of approximately 1.00 μm or less defined by a top surface of the counter electrode layer (24). The base electrode layer (18) includes an electrode isolation region (36) disposed approximately 0.8 μm in horizontal distance from the junction contact (31) for providing device isolation.
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Northrop Grumman Corporation
Posz Law Group , PLC
Richards N. Drew
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