Self-aligned ion implanted transition metal contact diffusion ba

Details Self-aligned ion implanted transition metal contact diffusion ba Self-aligned ion implanted transition metal contact diffusion ba

1994-11-18

1996-02-13

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257757, 257763, 257761, 257767, H01L 2940

Patent

active

054913659

ABSTRACT:
A method of forming a contact diffusion barrier in a thin geometry integrated circuit device involves implanting a second material into a low resistivity material that overlies the semiconductor to which contact is desired. The low resistivity and implanted materials are selected to intereact with each other and form a contact diffusion barrier. Both materials may include transition metals, in which case the diffusion barrier is a composite transition metal. Alternately, the low resistivity material may include a transition metal, while implantation is performed with nitrogen. The implantation is performed by plasma etching, preferably with active cooling, which can be combined in a continuous step with the etching of the contact opening. The resulting contact diffusion barrier is self-aligned with the contact opening, and is established only in the immediate vicinity of the opening.

REFERENCES:
patent: 4772571 (1988-09-01), Scovell et al.
patent: 4924295 (1990-05-01), Kuecher
patent: 5384485 (1995-01-01), Nishida et al.

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