Self-aligned internal mobile ion getter for multi-layer metalliz

Details Self-aligned internal mobile ion getter for multi-layer metalliz Self-aligned internal mobile ion getter for multi-layer metalliz

1986-10-03

1988-03-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, H01L 21385, H01L 21441, H01L 21467

Patent

active

047328657

ABSTRACT:
A multi-layer metallization method and structure that permits the use of sodium-ion contaminated titanium-tungsten (Ti:W) as a barrier metal with gold conductor metal on a silicon substrate, without significant degradation of device characteristics. After depositing the barrier and conductor metal layers, a layer of phosphorous-silicate glass (PSG) is anisotropically-etched to expose the field oxide and top surface of the conductor metal but leave PSG layer on each sidewall of the metallization structure. The circuit is then annealed at 400.degree. C. for 30 minutes. Then, an adhesion layer (Si.sub.3 N.sub.4) and an insulative layer (SiO.sub.2) are deposited over the metallization structure and field oxide, with the adhesion layer in contact with the top surface of the conductor metal and the gettering composition. The resultant circuit has a field threshold voltage shift comparable to devices made without a metal-ion-contaminated barrier layer and the resultant structure reliably retains the PSG layers in contact with the metallization sidewalls.

REFERENCES:
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patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4589928 (1986-05-01), Dalton et al.
patent: 4642878 (1987-02-01), Maeda
Vossen, VLSI Metallization Problems and Trends, Semiconductor International (Sep. 1981), pp. 91-99.
SZE, Ed, VLSI Technology, 1983, pp. 360-373.
Summers, Process for Two-Layer Gold IC Metallization, Solid State Tech. (Dec. 1983), pp. 137-141.
Kaplan et al., "Phosphosilicate Glass Stabilization of MOS Structures", J. Electrochem. Soc: Solid State Science, V. 118, No. 10 (1971), pp. 1649-1653.

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