Self-aligned interlayer contact process using a plasma etch of p

Details Self-aligned interlayer contact process using a plasma etch of p Self-aligned interlayer contact process using a plasma etch of p

1992-06-02

1992-12-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437229, 437984, 156643, 1566591, H01L 21283, H01L 21312

Patent

active

051751275

ABSTRACT:
Described is a method of forming a self-aligned contact to an underlying structure with fewer critical patterning steps. The invention uses an isotropic oxygen plasma etch of a resist layer and a subsequent oxide etch to expose an underlying conductive layer such as doped polycrystalline silicon. A second conductive layer formed thereupon contacts the exposed first conductive layer.

REFERENCES:
patent: 4814041 (1989-03-01), Auda
patent: 4960729 (1990-10-01), Orbach et al.
patent: 4966864 (1990-10-01), Pfiester
patent: 5104822 (1992-04-01), Butler
patent: 5124280 (1992-06-01), Wei et al.
patent: 5139904 (1992-08-01), Auda et al.

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