Self-aligned integrated circuit bipolar transistor having monocr

Details Self-aligned integrated circuit bipolar transistor having monocr Self-aligned integrated circuit bipolar transistor having monocr

1990-09-26

1992-06-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG11, 357 34, 357 56, H01L 21265, H01L 2970

Patent

active

051186349

ABSTRACT:
An integrated circuit vertical bipolar transistor includes monocrystalline emitter, base and collector contacts for electrically contacting the transistor's emitter, base and collector regions, respectively. The collector, base contact and emitter contact are preferably insulated from one another by oxide regions which are formed from the monocrystalline collector and monocrystalline base contacts. Since all of the contacts are formed of monocrystalline material and the oxide isolation is formed from monocrystalline material, high performance devices are formed.
The process of forming the transistor self aligns the base to the collector and the emitter to the base. The monocrystalline base contact is also self aligned to the base and the monocrystalline emitter contact is self aligned to the emitter. The process preferably uses epitaxial lateral overgrowth and selective epitaxial growth from a mesa region to form the monocrystalline contacts. A shallow phosphorus implant into the base contact is used to preferentially grow the oxide between the base contact and emitter contact.

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