Self-aligned, high resolution resonant dielectric lithography

Details Self-aligned, high resolution resonant dielectric lithography Self-aligned, high resolution resonant dielectric lithography

1989-11-02

1991-08-13

Hayes, Monroe H.

Photocopying

Projection printing and copying cameras

Step and repeat

355 67, 355 71, G03B 2742

Patent

active

050400207

ABSTRACT:
Methods of fabricating electrical contacts on both sides of a thin membrane to form a millimeter wave, self-aligned, opposed gate-source transistor are disclosed. The transistor structure has a subhalf-micron gate, dual-drains placed symmetrically around both sides of the gate, and a source approximately half the length of the gate. The source is directly opposite, and centered under, the gate on the opposite surface of a semiconductor thin film. The gate electrode is fabricated on the first surface of the thin film using conventional single surface lithography, and is used as a conformed mask for the source lithography, thereby self-aligning the source to the gate. The source is formed by resonant dielectric lithography, wherein the gate side of the thin film is irradiated by collimated ultraviolet light to expose a negative resist on the source side with a resolution of less than a wavelength. Lateral diffraction effects affect the relative dimension of the source with respect to the gate. The electron-beam lithographic process utilizes electron scattering in the thin film for the same purpose. This new untraviolet lithography process avoids the need to handle the thin film until after source metallization has been completed.

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