Self-aligned, high resolution resonant dielectric lithography

Photocopying – Projection printing and copying cameras – Step and repeat

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

355 67, 355 71, G03B 2742

Patent

active

050400207

ABSTRACT:
Methods of fabricating electrical contacts on both sides of a thin membrane to form a millimeter wave, self-aligned, opposed gate-source transistor are disclosed. The transistor structure has a subhalf-micron gate, dual-drains placed symmetrically around both sides of the gate, and a source approximately half the length of the gate. The source is directly opposite, and centered under, the gate on the opposite surface of a semiconductor thin film. The gate electrode is fabricated on the first surface of the thin film using conventional single surface lithography, and is used as a conformed mask for the source lithography, thereby self-aligning the source to the gate. The source is formed by resonant dielectric lithography, wherein the gate side of the thin film is irradiated by collimated ultraviolet light to expose a negative resist on the source side with a resolution of less than a wavelength. Lateral diffraction effects affect the relative dimension of the source with respect to the gate. The electron-beam lithographic process utilizes electron scattering in the thin film for the same purpose. This new untraviolet lithography process avoids the need to handle the thin film until after source metallization has been completed.

REFERENCES:
patent: 3573975 (1971-04-01), Dhara et al.
patent: 4102683 (1978-07-01), DiPiazza
patent: 4346164 (1982-08-01), Tabarelli et al.
patent: 4371598 (1983-02-01), Medernach et al.
patent: 4458994 (1984-07-01), Jain et al.
patent: 4490457 (1984-12-01), Kardashian et al.
patent: 4507845 (1985-04-01), McIver et al.
patent: 4529685 (1985-07-01), Borodovsky
patent: 4537654 (1985-08-01), Berenz et al.
patent: 4543319 (1985-09-01), Chao et al.
patent: 4551904 (1985-11-01), Berenz et al.
patent: 4557986 (1985-12-01), Blais
patent: 4557995 (1985-12-01), Broers et al.
patent: 4905037 (1990-02-01), Yamamoto et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self-aligned, high resolution resonant dielectric lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned, high resolution resonant dielectric lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned, high resolution resonant dielectric lithography will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1530883

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.