Self-aligned heterojunction bipolar transistor

Details Self-aligned heterojunction bipolar transistor Self-aligned heterojunction bipolar transistor

1994-04-25

1995-11-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257448, 257459, 257745, 257750, 257758, H01L 2978

Patent

active

054710782

ABSTRACT:
A method of fabricating heterojunction bipolar transistors (HBTs) including epitaxial growth of collector, base and emitter layers, allowing for self-aligned emitter-base contacts to minimize series base resistance and to reduce total base-collector capacitance.

REFERENCES:
patent: 4889821 (1989-12-01), Selle et al.
patent: 4965650 (1990-10-01), Inada et al.

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