Self-aligned gated electron field emitter

Details Self-aligned gated electron field emitter Self-aligned gated electron field emitter

1991-11-08

1993-11-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 73, 156651, H01L 2140, H01L 21461

Patent

active

052665305

ABSTRACT:
A method of fabricating a self-aligned gated electron field emitter. An oxidation process forms an optimized, atomically sharp needle (18) in a silicon substrate (12). The needle and surrounding planar area are conformally coated with silicon dioxide (22). A dielectric layer (24) is deposited and planarized over the needle. The dielectric layer is then partially etched away so as to expose the coated needle. The silicon dioxide exposed on the needle is isotropically etched so as to undercut the dielectric layer. A gate metal is directionally deposited so as to form a gate layer (26) on the planar portions of the dielectric layer that is electrically isolated from the gate metal (28) deposited on the needle. The metal on the needle is anodically etched by applying the potential only to the silicon and not to the gate layer. Electro-plating may recoat the needle with another metal (30). The silicon substrate may be replaced by a glass substrate (42) on which is deposited a polysilicon or amorphous silicon layer (40). The invention allows the fabrication of an array of emitters with closely spaced gates over large areas and on inexpensive substrates.

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