Self-aligned gate field effect transistor and method for making

Details Self-aligned gate field effect transistor and method for making Self-aligned gate field effect transistor and method for making

1976-07-14

1978-03-07

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29580, 357 15, 357 22, B01J 1700

Patent

active

040771113

ABSTRACT:
A self-aligned gate field effect transistor is described which is capable of operating at high frequencies. A method for making the transistor is described which comprises plating metal partially over an oxide layer, then removing the oxide to produce an overlapping metal portion and then plating again to produce a gate contact between the overlapping metal portions.

REFERENCES:
patent: 3855690 (1974-12-01), Kim
patent: 3861024 (1975-01-01), Napoli
patent: 3866310 (1975-02-01), Driver
patent: 3906541 (1975-09-01), Goronkin
patent: 4040168 (1977-08-01), Huang

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