Self-aligned gallium arsenide/aluminum gallium arsenide collecto

Details Self-aligned gallium arsenide/aluminum gallium arsenide collecto Self-aligned gallium arsenide/aluminum gallium arsenide collecto

1991-05-13

1993-11-30

Sotomayor, John B.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257523, 257563, 257586, 257575, H01L 2972

Patent

active

052668193

ABSTRACT:
A C-up HBT is made to operate in the microwave/millimeter frequency range by self-aligning the collector uprisers on the base relative to proton damaged emitter regions and the base contacts which minimizes carrier injection into the extrinsic base. The use of about 7-10% indium in the indium gallium arsenide base is sufficient to stop the FREON-12 etch at the base after totally etching through the collector and single self-aligning mask.

REFERENCES:
patent: 4939562 (1990-07-01), Adlerstein
Sullivan et al, `AlGaAs . . . Heterojunction Bipolar . . . `, Electronics Lttrs., vol. 22, No. 8, Apr. 10, 1986, pp. 419-421.
Cavanagh et al, `Reduction of Collector-Emitter Leakage . . . `, IBM Tech., vol. 25, No. 4, Sep. 1982, p. 1882.
Zohta et al, `Shallow Donor . . . Produced by Ion Implant . . . `, Japan. J. Appl. Phys., vol. 10, 1971, pp. 532-533.

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