Self-aligned field-plate isolation between active elements

Details Self-aligned field-plate isolation between active elements Self-aligned field-plate isolation between active elements

1991-11-04

1993-09-14

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including means for establishing a depletion region...

257316, 257390, H01L 2940, H01L 2968, H01L 2710

Patent

active

052452123

ABSTRACT:
The structure and method of this invention provide, for example, electrical isolation between active elements in adjacent rows and/or columns of an integrated circuit by use of a self-aligned field-plate conductor formed over and insulated from the substrate regions that are bounded by the channel regions of field-effect transistors in adjacent rows and that are bounded by the bitlines forming those transistors in a column. The field-plate conductor is formed, for example, in a strip that extends over the isolation areas and thermal insulator regions between row lines of the memory cell array. The field-plate conductor strip is connected to a voltage supply that has a potential with respect to the potential of the semiconductor substrate which causes the isolation areas to be nonconductive. Component density may be increased over that of prior-art structures and methods.

REFERENCES:
patent: 4455565 (1984-06-01), Goodman et al.
patent: 4458262 (1984-07-01), Chao
patent: 4561170 (1985-12-01), Doering et al.
patent: 4652898 (1987-03-01), Lange et al.
patent: 4825278 (1989-04-01), Hillenius et al.
patent: 4947222 (1990-08-01), Gill et al.

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