Self-aligned, field aiding double polysilicon CCD electrode stru

Details Self-aligned, field aiding double polysilicon CCD electrode stru Self-aligned, field aiding double polysilicon CCD electrode stru

1980-05-08

1982-03-09

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 59, 357 91, 307221D, H01L 2978, H01L 2904, G11C 1928

Patent

active

043192610

ABSTRACT:
A charge coupled device (CCD) having a double layer polysilicon electrode structure and method for making the same are disclosed. The CCD structure provides for alignment of the polysilicon electrodes from one layer to another to eliminate substantially the overlap capacitance normally associated with conventional double layer CCD structures. More particularly, a first polysilicon layer is disposed over the gate dielectric of the CCD and comprises alternating doped and undoped regions laterally along the channel in the direction of change transfer, the regions extending the length of the channel transverse to the charge transfer and extending from the gate dielectric to the top surface thereof to form corresponding doped and undoped surface areas. On top of each undoped surface area and substantially aligned therewith is first a layer of dielectric material and second a layer of doped polysilicon. The first and second layers of doped polysilicon constitute the aligned double layer electrode structure of the CCD with electrical insulation afforded by the interviewing dielectric layer. The disclosed method of fabrication offers fewer processing steps and a reliable and reproducible product.

REFERENCES:
patent: 3728590 (1973-04-01), Kim et al.
patent: 3967365 (1976-07-01), Friedrich
patent: 4156247 (1979-05-01), Hartman et al.

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