Self-aligned extended epitaxy mesfet fabrication process

Details Self-aligned extended epitaxy mesfet fabrication process Self-aligned extended epitaxy mesfet fabrication process

1981-12-07

1983-09-20

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29580, 29591, 148174, 148175, 156649, 357 15, 357 22, 427 84, 427 88, H01L 21203, H01L 21306

Patent

active

044047320

ABSTRACT:
A fabrication process for a gallium arsenide MESFET device is disclosed. A feature of the invention is placing a gate structure on the gallium arsenide substrate. Then a process including molecular beam epitaxy, grows epitaxial gallium arsenide on each respective side of the gate, forming a raised source region and a raised drain region. Gallium arsenide will not grow in a conductive state on top of a tungsten gate metal. The resulting MESFET device has a raised source and drain which significantly reduces the high resistance depleted surface adjacent to the gate which generally occurs in planer gallium arsenide MESFET devices. Furthermore, the MESFET channel region which is defined by the proximate edges of the source and the drain, is self-aligned with the edges of the gate by virtue of the insitu process for the formation of the source and drain, as described above.

REFERENCES:
patent: 3609477 (1971-09-01), Drangeid et al.
patent: 3943622 (1976-03-01), Kim et al.
patent: 4077111 (1978-03-01), Driver et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4236166 (1980-11-01), Cho et al.
patent: 4336549 (1982-06-01), Ladd
Suzuki et al., "GaAs Power FET" Fujitsu Sci. & Tech. J. (Japan) vol. 12, No. 2, (Jun. 1976), pp. 163-177.
Metze et al., "GaAs Integrated Circuits--Molecular Beam Epitaxy" Appl. Phys. Lett., vol. 37 (7) Oct. 1, 1980, pp. 628-630.
Bozler et al., "Fabrication--of the Permeable Base Transistor" IEEE Trans. on Electron Dev., vol. ED-27, No. 6, Jun. 1980, pp. 1128-1141.

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