Self-aligned extended base contact for a bipolar transistor havi

Details Self-aligned extended base contact for a bipolar transistor havi Self-aligned extended base contact for a bipolar transistor havi

1990-02-05

1991-10-29

Prenty, Mark

357 67, 357 34, 357 59, H01L 2348, H01L 2904, H01L 2972

Patent

active

050619861

ABSTRACT:
There is disclosed herein a bipolar transistor structure having a self aligned extended silicide base contact. The contact extends to the position of a base contact window located outside the perimeter of the isolation island on a contact pad formed over the field oxide. This allows the size of the isolation island to be kept smaller and allows a smaller extrinsic base regions to be formed. The base contact is formed of titanium and titanium silicide where the titanium/silicide boundary is self aligned with the edge of the device isolation island. The silicide is formed by reacting the titanium which completely covers the exposed epitaxial silicon inside the isolation island. An anisotropically etched oxide sidewall spacer insulates the silicide from the sidewall of the silicide-covered, polysilicon emitter contact.

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