Self-aligned epitaxial method for the fabrication of semiconduct

Details Self-aligned epitaxial method for the fabrication of semiconduct Self-aligned epitaxial method for the fabrication of semiconduct

1976-10-26

1978-07-18

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576R, 29576W, 29577R, 29570, 148187, 357 50, 357 52, H01L 2120, H01L 2176

Patent

active

041013506

ABSTRACT:
In the fabrication of semiconductor devices, a method is provided which includes the steps of selectively doping a semiconductor substrate of one conductivity type to form therein discrete regions of opposite conductivity type, followed by selective epitaxial growth to fill the windows of the diffusion mask, whereby the epitaxially grown regions are inherently characterized by exact alignment with the doped regions. The self-aligned epitaxial structure is then subjected to further processing in accordance with numerous alternate schemes to provide a wide variety of devices.

REFERENCES:
patent: 3206339 (1965-09-01), Thornton
patent: 3386865 (1968-06-01), Doo
patent: 3748545 (1973-07-01), Beale
patent: 3753803 (1973-08-01), Nomura et al.
patent: 3861968 (1975-01-01), Magdo et al.
patent: 3998673 (1976-12-01), Chow

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