Self-aligned double poly BJT using sige spacers as extrinsic bas

Details Self-aligned double poly BJT using sige spacers as extrinsic bas Self-aligned double poly BJT using sige spacers as extrinsic bas

1995-06-07

1997-01-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257587, 257588, 257197, H01L 2973, H01L 29737

Patent

active

055920179

ABSTRACT:
A bipolar transistor (100) and a method for forming the same. A base electrode (114) is separated from the collector region (102) by an insulator layer (110). A doped conductive spacer (115) is formed laterally adjacent the base electrode (114). The conductive spacer (115) comprises a conductive material that is capable of serving as a dopant source for n and p-type dopants and is able to be selectively etched with respect to silicon (e.g., silicon-germanium). Base link-up region (112) is diffused from conductive spacer (115) into the collector region (102). Processing then continues to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).

REFERENCES:
patent: 4975381 (1990-12-01), Taka et al.
patent: 5121184 (1992-06-01), Huang et al.
patent: 5198689 (1993-03-01), Fujioka
patent: 5323032 (1994-06-01), Sato et al.
patent: 5500554 (1996-03-01), Sato
patent: 5502330 (1996-03-01), Johnson

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