Self aligned diode fabrication method and self aligned laser...

Details Self aligned diode fabrication method and self aligned laser... Self aligned diode fabrication method and self aligned laser...

2006-11-15

2011-10-25

Park, Kinam (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S043010

Reexamination Certificate

active

08045595

ABSTRACT:
A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask forming the ridge. An insulating layer is deposited over the ridge and at least a portion of the sacrificial layer is removed. At least a portion of the insulating thin film at the top of the stack is also removed. A pad metal is deposited in electrical contact with the contact and is insulated from the ridge and laser diode epitaxial structures by the insulating layer.

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